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savantic semiconductor product specification silicon pnp power transistors 2SA715 d escription with to-126 package complement to type 2sc1162 applications low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximun ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -35 v v ceo collector-emitter voltage open base -35 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -2.5 a i cm collector current-peak -3 a t a =25 0.75 p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA715 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; r be = : -35 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -35 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2.0a ;i b =-0.2a(pulse test) -0.5 -1.0 v v be base-emitter voltage i c =-1.5a;v ce =-2v(pulse test) -1.0 -1.5 v i cbo collector cut-off current v cb =-35v; i e =0 -20 a h fe-1 dc current gain i c =-0.5a ; v ce =-2v 60 320 h fe-2 dc current gain i c =-1.5a ; v ce =-2v(pulse test) 20 f t transition frequency i c =-0.2a ; v ce =-2v(pulse test) 160 mhz h fe-1 classifications b c d 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon pnp power transistors 2SA715 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SA715

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